Semiconductor device and fabrication method for the same

ABSTRACT

The semiconductor device includes: a transistor having a gate electrode formed on a semiconductor substrate and first and second source/drain regions formed in portions of the semiconductor substrate on both sides of the gate electrode; a gate interconnect formed at a position opposite to the gate electrode with respect to the first source/drain region; and a first silicon-germanium layer formed on the first source/drain region to protrude above the top surface of the semiconductor substrate. The gate interconnect and the first source/drain region are connected via a local interconnect structure that includes the first silicon-germanium layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Divisional of U.S. application Ser. No.12/247,518, filed on Oct. 8, 2008, claiming priority of Japanese PatentApplication No. 2007-282678, filed on Oct. 31, 2007, the entire contentsof each of which are hereby incorporated by reference.

BACKGROUND OF THE INVENTION

1. Technical Field

The present invention relates to a semiconductor device having a localinterconnect structure and a fabrication method for the same.

2. Background Art

In recent years, with the trend toward finer semiconductor devices, gateelectrodes tend to have larger contact resistance and wiring resistance.To address this problem, a local interconnect structure is used toconnect a gate electrode with a source/drain region to thereby reducewiring resistance (see Japanese Laid-Open Patent Publication No.2007-150244, for example). The local interconnect structure as usedherein refers to routing, including a shared contact plug, that connectsan element and an interconnect mutually without use of global wiringformed in a wiring layer.

In particular, in a metal-insulator-semiconductor (MIS) transistorconstituting a static random access memory (SRAM) cell, such a localinterconnect structure is very effective because with use of the localinterconnect structure, not only the reduction in wiring resistance butalso reduction in the size of the SRAM cell can be attained.

FIG. 10 shows a cross-sectional configuration of a conventionalsemiconductor device having a shared contact. As shown in FIG. 10, anactive region 107 surrounded with an isolation region 106 is formed in asemiconductor substrate 101. A MIS transistor 110 is formed in theactive region 107. A gate electrode 103A of the MIS transistor 110 isformed on the active region 107 with a gate insulating film 102Ainterposed therebetween. Source/drain regions 104 a and 104 b are formedin portions of the active region 107 located on both sides of the gateelectrode 103A. Sidewalls 105A are formed on both side faces of the gateelectrode 103A.

A gate interconnect 103B is formed on a portion of the active region 107located on the side of the source/drain region 104 a opposite to theside thereof closer to the gate electrode 103A, with an insulating film102B interposed therebetween. Sidewalls 105B are formed on both sidefaces of the gate interconnect 103B.

An underlying insulating film 120 and an interlayer insulating film 121are formed on the semiconductor substrate 101 to cover the gateelectrode 103A and the gate interconnect 103B. A shared contact plug 108connected to both the source/drain region 104 a and the gateinterconnect 103B and a contact plug 109 connected to the source/drainregion 104 b are formed through the underlying insulating film 120 andthe interlayer insulating film 121.

With the connection of the source/drain region 104 a with the gateinterconnect 103B via the shared contact plug 108, it is possible to notonly reduce wiring resistance but also reduce the occupation area,compared with a configuration in which contacts are separately formedfor the source/drain region 104 a and the gate interconnect 103B and areconnected to each other in a wiring layer. Hence, semiconductor devicesadopting a local interconnect structure such as the shared contact plugcan be downsized without increasing wiring resistance.

SUMMARY OF THE INVENTION

However, the conventional semiconductor device has the followingproblem. To form a shared contact plug, it is necessary to form anopening (contact hole) that exposes the top surfaces of the source/drainregion and the gate interconnect through the interlayer insulating film.The contact hole for the shared contact plug is therefore considerablylarger than a contact hole for forming a normal contact plug. When suchcontact holes having considerably different sizes are formed by dryetching, there arises a difference in etched dimension (etching criticaldimension) according to the difference in opening area, and this makesit difficult to control the dimensions of the shared contact plug andthe normal contact plug (see Y. Kimura et al, Optimization of contactformation process for 45 nm technology node Ultra High Density SRAM″,Extended Abstracts of the 54th Meeting, Japan Society of AppliedPhysics, 2007, p. 931, for example). Hence, to secure the alignmentmargin between the shared contact plug and the source/drain region, thearea of the source/drain region must be increased. This raises a problemof increasing the size of the resultant semiconductor device.

An object of the present invention is providing a semiconductor devicehaving a local interconnect structure involving no increase in the sizeof source/drain regions.

To attain the above object, according to the present invention, asemiconductor device is configured to have a local interconnectstructure that has a SiGe layer formed on a source/drain region toprotrude above the top surface of a semiconductor substrate.

Specifically, the semiconductor device of the present inventionincludes: a transistor having a gate electrode formed on a semiconductorsubstrate and first and second source/drain regions formed in portionsof the semiconductor substrate located on the sides of the gateelectrode; a gate interconnect formed at a position opposite to the gateelectrode with respect to the first source/drain region; a firstsilicon-germanium layer formed on the first source/drain region toprotrude above the top surface of the semiconductor substrate; and afirst contact plug connected to the first silicon-germanium layer,wherein the gate interconnect and the first source/drain region areconnected via a local interconnect structure including the firstsilicon-germanium layer.

In the semiconductor device of the present invention, the aspect ratioof the contact hole can be reduced compared with the case of forming acontact plug directly connected to both the source/drain region and thegate interconnect. This improves the precision of formation of thecontact hole, and thus makes it unnecessary to increase the size of thesource/drain region. As a result, a downsized semiconductor devicehaving a low-resistance local interconnect structure can be implemented.

The first fabrication method for a semiconductor device of the presentinvention includes the steps of: (a) forming a gate electrode and a gateinterconnect spaced from each other on a semiconductor substrate; (b)forming a first source/drain region and a second source/drain region inportions of the semiconductor substrate located on a side of the gateelectrode closer to the gate interconnect and on the opposite side ofthe gate electrode, respectively; (c) forming a first silicon-germaniumlayer to extend over the top surfaces of the first source drain regionand the gate interconnect; (d) forming an interlayer insulating film onthe semiconductor substrate after the step (c); and (e) forming a firstcontact plug through the interlayer insulating film to be connected tothe first silicon-germanium layer.

In the first fabrication method for a semiconductor device, the firstsource/drain region and the conductive film are electrically connectedwith each other via the SiGe layer. This can reduce the wiringresistance between the first source/drain region and the conductivefilm. Also, since the contact plug can only be in contact with the SiGelayer, it is unnecessary to provide a shared contact plug. Hence, theaspect ratio of the contact hole can be reduced, and thus the contacthole can be formed with high precision. It is therefore unnecessary toincrease the size of the first source/drain region. As a result, adownsized semiconductor device with low wiring resistance can befabricated.

The second fabrication method for a semiconductor device of the presentinvention includes the steps of: (a) forming a gate electrode and a gateinterconnect spaced from each other on a semiconductor substrate; (b)forming a first source/drain region and a second source/drain region inportions of the semiconductor substrate located on a side of the gateelectrode closer to the gate interconnect and on the opposite side ofthe gate electrode, respectively; (c) forming a first silicon-germaniumlayer on the first source drain region to protrude above the top surfaceof the semiconductor substrate; (d) forming an interlayer insulatingfilm on the semiconductor substrate after the step (c); and (e) forminga shared contact plug through the interlayer insulating film to beconnected to part of the first silicon-germanium layer and part of thegate interconnect.

In the second fabrication method for a semiconductor device, the aspectratio of the contact hole for formation of the shared contact plug canbe reduced. Hence, the contact hole can be formed with high precision,and this makes it unnecessary to increase the size of the firstsource/drain region. As a result, a downsized semiconductor device withlow wiring resistance can be fabricated.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a semiconductor device of Embodiment1 of the present invention.

FIGS. 2A to 2C are cross-sectional views sequentially illustratingprocess steps of a fabrication method for the semiconductor device ofEmbodiment 1 of the present invention.

FIGS. 3A to 3C are cross-sectional views sequentially illustratingprocess steps of the fabrication method for the semiconductor device ofEmbodiment 1 of the present invention.

FIGS. 4A and 4B are cross-sectional views sequentially illustratingprocess steps of the fabrication method for the semiconductor device ofEmbodiment 1 of the present invention.

FIG. 5 is a cross-sectional view illustrating a process step of thefabrication method for the semiconductor device of Embodiment 1 of thepresent invention.

FIG. 6 is a cross-sectional view of a semiconductor device of Embodiment2 of the present invention.

FIGS. 7A and 7B are cross-sectional views sequentially illustratingprocess steps of a fabrication method for the semiconductor device ofEmbodiment 2 of the present invention.

FIGS. 8A and 8B are cross-sectional views sequentially illustratingprocess steps of the fabrication method for the semiconductor device ofEmbodiment 2 of the present invention.

FIG. 9 is a cross-sectional view of a semiconductor device of analteration to Embodiment 2 of the present invention.

FIG. 10 is a cross-sectional view of a conventional semiconductordevice.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1

FIG. 1 shows a cross-sectional configuration of a semiconductor deviceof Embodiment 1 of the present invention. As shown in FIG. 1, thesemiconductor device of this embodiment has a local interconnectstructure 60 composed of a SiGe layer 61 formed to extend over the topsurfaces of a first source/drain region 29A, a sidewall 43A and a gateinterconnect 42.

As shown in FIG. 1, an n-type well 16 is formed in a semiconductorsubstrate 11 made of silicon (Si), and an active region 18 surroundedwith an isolation region 17 is formed in the n-type well 16. A p-typeMIS transistor 12 is formed in the active region 18.

The MIS transistor 12 includes a gate electrode 22 formed on the activeregion 18 with a gate insulating film 21 interposed therebetween andsidewalls 23 formed on both side faces of the gate electrode 22. Each ofthe sidewalls 23 has an offset sidewall 24 having a plate-shapedcross-section, an inner sidewall 25 having an L-shaped cross-section andan outer sidewall 26 covering the inner sidewall 25.

P-type extension regions 28A and 28B are formed in portions of theactive region 18 located on both sides of the gate electrode 22. Firstand second p-type source/drain regions 29A and 29B, having depressionsin their top portions, are formed in portions of the active region 18located outside of the respective sidewalls 23.

A gate interconnect 42 is formed on the active region 18, with aninsulating film 41 interposed therebetween, at a position opposite tothe gate electrode 22 with respect to the first source/drain region 29A.A sidewall 43A is formed on one of the side faces of the gateinterconnect 42 closer to the first source/drain region 29A, and asidewall 43B is formed on the other side face of the gate interconnect42. The sidewall 43A is lower in height than the sidewall 43B, with partof the side face of the gate interconnect 42 closer to the firstsource/drain region 29A being left uncovered with the sidewall 43A.

Each of the sidewalls 43A and 43B has an offset sidewall 44 having aplate-shaped cross-section, an inner sidewall 45 having an L-shapedcross-section and an outer sidewall 46 covering the inner sidewall 45.

The first source/drain region 29A and the gate interconnect 42 areelectrically connected to each other via the silicon-germanium (SiGe)layer 61 that constitutes the local interconnect structure 60. This canreduce the wiring resistance between the first source/drain region 29Aand the gate interconnect 42. A contact plug 62 is formed on the portionof the SiGe layer 61 that buries the depression on the firstsource/drain region 29A via a silicide layer 67. Likewise, a contactplug 66 is formed on the portion of a SiGe layer 65 that buries thedepression on the second source/drain region 29B via the silicide layer67. The contact plugs 62 and 66 are formed through an underlyinginsulating film 71 and an interlayer insulating film 72 formedsequentially to cover the gate electrode 22, the gate interconnect 42and the SiGe layers 61 and 65.

In the semiconductor device of this embodiment, as shown in FIG. 1, theSiGe layer 61 is used as the local interconnect structure 60 forconnecting the first source/drain region 29A with the gate interconnect42. Hence, the contact plug 62 reaching the silicide layer 67 on theSiGe layer 61 is not required to be large, but can be of the same sizeas the contact plug 66 reaching the silicide layer 67 on the SiGe layer65. In formation of the contact holes through the underlying insulatingfilm 71 and the interlayer insulating layer 72, therefore, there willarise no etching critical dimension according to the difference inopening area. Thus, the dimensions of the contact plugs 62 and 66 can beeasily controlled without the necessity of increasing the size of thefirst source/drain region 29A. As a result, the semiconductor device canbe downsized.

The SiGe layers 61 and 65 are formed to bury the depressions in the topportions of the first and second source/drain regions 29A and 29B. Withthese SiGe layers, compressive stress in the gate length direction isapplied to the channel region of the MIS transistor 12. This improvesthe mobility of hole carriers, and thus can improve the driving force ofthe p-type MIS transistor.

In this embodiment, the top portions of the SiGe layers 61 and 65 andthe gate electrode 22 are silicified to form the silicide layer 67. Thecontact plugs 62 and 66 are therefore in contact with the SiGe layers 61and 65 via the silicide layer 67. This can further reduce the wiringresistance.

Hereinafter, a fabrication method for the semiconductor device ofEmbodiment 1 will be described with reference to FIGS. 2A to 2C, 3A to3C, 4A, 4B and 5. First, as shown in FIG. 2A, an isolation region 17 isformed in the semiconductor substrate 11 made of Si, to define theactive region 18 surrounded with the isolation region 17. N-typeimpurity ions are implanted in the semiconductor substrate 11 to formthe n-type well 16. Subsequently, an insulating film made of SiO₂ andthe like having a thickness of about 2 nm and a polysilicon film havinga thickness of about 100 nm are sequentially formed on the semiconductorsubstrate 11. The polysilicon film and the insulating film are thenselectively etched, to form the gate insulating film 21 and the gateelectrode 22 on the active region 18, and also the insulating film 41and the gate interconnect 42 at a position on the active region 18spaced from the gate electrode 22. Note that the insulating film 41 andthe gate interconnect 42 are not necessarily formed on the active region18 but may be formed on the isolation region 17. A resist mask or a hardmask may be used as an etching mask for the polysilicon film and theinsulating film.

Thereafter, an insulating film made of SiO₂ and the like is formed onthe semiconductor substrate 11 and then etched back, to form the offsetsidewalls 24 and 44 on the side faces of the gate electrode 22 and gateinterconnect 42, respectively.

Using the gate electrode 22 and the offset sidewalls 24 as a mask, ap-type impurity is implanted in the active region 18 to form the p-typeextension regions 28A and 28B as shallow source/drain regions.

Subsequently, a silicon oxide film and a silicon nitride film aresequentially deposited on the semiconductor substrate 11 and then etchedback. This results in formation of the inner sidewalls 25 made of thesilicon oxide film and the outer sidewalls 26 made of the siliconnitride film on both side faces of the gate electrode 22 via the offsetsidewalls 24, as well as formation of the inner sidewalls 45 made of thesilicon oxide film and the outer sidewalls 46 made of the siliconnitride film on both side faces of the gate interconnect 42 via theoffset sidewalls 44. Hence, the sidewalls 23 are formed on both sidefaces of the gate electrode 22, the sidewall 43A is formed on the sideface of the gate interconnect 42 closer to the gate electrode 22, andthe sidewall 43B is formed on the other side face of the gateinterconnect 42.

A p-type impurity is then implanted in the active region 18 using thegate electrode 22 and the sidewalls 23 as a mask, to form the p-typefirst and second source/drain regions 29A and 29B as deep source/drainregions in portions of the active region 18 located outside of thesidewalls 23.

As shown in FIG. 2B, a protection film 81 made of SiO₂ and the likehaving a thickness of about 50 nm is formed on the entire surface of thesemiconductor substrate 11.

As shown in FIG. 2C, the protection film 81 is partly removed to exposethe first and second source/drain regions 29A and 29B, the gateinterconnect 42 and the sidewall 43A, while being left unremoved on thegate electrode 22 not to expose the top surface of the gate electrode22.

As shown in FIG. 3A, using the protection film 81 and the sidewalls 23as a mask, the semiconductor substrate 11 is etched, to form depressions18 a and 18 b having a depth of about 40 nm on the portions of theactive region 18 where the first and second source/drain regions 29A and29B are formed. Simultaneously, the gate interconnect 42 is etched atits top portion, to become lower in height than the gate electrode 22and the sidewall 43B. The sidewall 43A is also etched to become lower inheight than the sidewall 43B. The sidewall 43A is further etchedselectively to expose the upper part of the side face of the gateinterconnect 42 closer to the gate electrode 22. The etching may be madeby dry etching, wet etching using an organic alkaline etchant or acombined method thereof.

As shown in FIG. 3B, a p-type SiGe layer is epitaxially grown on the topsurface of the gate interconnect 42, the side face of the gateinterconnect 42, the top surface of the first source/drain region 29Aand the top surface of the second source/drain region 29B, on all ofwhich Si is exposed. In this way, the SiGe layer 61 is formed to extendover the top surfaces of the first source/drain region 29A and the gateinterconnect 42, and the SiGe layer 65 is formed on the secondsource/drain region 29B. The first source/drain region 29A and the gateinterconnect 42 are therefore electrically connected with each other.The portion of the SiGe layer 61 located on the first source/drainregion 29A and the SiGe layer 65 respectively bury the depressions 18 aand 18 b and protrude above the top surface of the semiconductorsubstrate 11. The SiGe layers 61 and 65 may be formed by low-pressurechemical vapor deposition (low-pressure CVD) using silane gas (SiH₄),germane gas (GeH₄) and a p-type dopant such as diborane (B₂H₆).

As shown in FIG. 3C, the protection film 81 is selectively removed. Asshown in FIG. 4A, a metal film having a high melting point such asnickel (Ni) is deposited on the semiconductor substrate 11 to athickness of several nanometers and then heat-treated, to silicify thetop portions of the SiGe layers 61 and 65, the gate interconnect 42 andthe gate electrode 22, to thereby form the silicide layer 67. Theunreacted remainder of the metal film is then removed.

As shown in FIG. 4B, the underlying insulating film 71 made of siliconnitride is formed on the entire surface of the semiconductor substrate11, and then the interlayer insulating film 72 made of silicon oxide isformed on the underlying insulating film 71. Thereafter, a contact hole72 a and a contact hole 72 b are formed through the interlayerinsulating film 72 and the underlying insulating film 71 to reach theportion of the silicide layer 67 on the SiGe layer 61 and the portionthereof on the SiGe layer 65, respectively. Note that the contact hole72 a may be formed at any position as long as it reaches the silicidefilm 67 on the SiGe layer 61. Hence, in place of the position above thefirst source/drain region 29A as in the illustrated example, the contacthole 72 a may be formed at a position above the gate interconnect 42,for example.

As shown in FIG. 5, the contact holes 72 a and 72 b are buried with aconductive material such as tungsten, to form the contact plug 62connected to the SiGe layer 61 via the silicide layer 67 and the contactplug 66 connected to the SiGe layer 65 via the silicide layer 67.

In the fabrication method for the semiconductor device of thisembodiment, the SiGe layer 61 is used as the local interconnectstructure for connecting the first source/drain region 29A with the gateinterconnect 42. Hence, unlike the local interconnect structure made ofthe conventional shared contact 108 as shown in FIG. 10, it isunnecessary to form a large contact hole. In other words, in thisembodiment, in which the first source/drain region 29A and the gateinterconnect 42 are connected with each other via the SiGe layer 61, thecontact hole 72 a reaching the silicide layer 67 on the SiGe layer 61 isnot required to be large, but can be of the same size as the contacthole 72 b reaching the silicide layer 67 on the SiGe layer 65.Accordingly, with no etching critical dimension occurring according tothe difference in contact hole opening area, the contact holes can beformed with high precision. This makes it possible to reduce the size ofthe first source/drain region 29A, and thus the semiconductor device canbe downsized. In the configuration of connecting the contact hole 72 ato the SiGe layer 61 at a position above the gate interconnect 42, also,the contact hole 72 a can be of the same size as the contact hole 72 b.The contact holes can therefore be formed with high precision.

Also, in the fabrication method for the semiconductor device of thisembodiment, the sidewall 43A is made short to expose part of the sideface of the gate interconnect 42 closer to the first source/drain region29A. The SiGe layer 61 therefore grows also on the side face of the gateinterconnect 42, and this ensures the connection between the SiGe layergrown on the first source/drain region 29A and the SiGe layer grown onthe gate interconnect 42. Note that it is not necessarily required toexpose the side face of the gate interconnect 42 closer to the firstsource/drain region 29A if only the SiGe layer 61 can be formed toextend over the top surfaces of the first source/drain region 29A andthe gate interconnect 42.

In this embodiment, the depressions 18 a and 18 b were formed on thefirst and second source/drain regions 29A and 29B, and the SiGe layers61 and 65 were formed to bury the depressions 18 a and 18 b. With thisformation, compressive stress in the gate length direction is applied tothe channel region of the MIS transistor, and this improves the drivingforce of the p-type MIS transistor. If such an effect of improving thedriving force is unnecessary, the depressions 18 a and 18 b may not beformed. If no such depressions are formed, the SiGe layer 65 may not beformed on the second source/drain region 29B. Like the p-type MIStransistor, an n-type MIS transistor may be formed in a similar manner.In this case, it is unnecessary to form depressions on the source/drainregions.

Embodiment 2

Embodiment 2 of the present invention will be described with referenceto the relevant drawings. FIG. 6 shows a cross-sectional configurationof a semiconductor device of Embodiment 2. In FIG. 6, the samecomponents as those in FIG. 1 are denoted by the same referencenumerals, and the description thereof is omitted here.

As shown in FIG. 6, the semiconductor device of this embodiment has alocal interconnect structure 60 composed of a SiGe layer 61 formed on afirst source/drain region 29A and a shared contact plug 63 connected topart of the SiGe layer 61 and part of a gate interconnect 42.

In this embodiment, the shared contact plug 63 is greater in size than acontact plug 66. However, with the SiGe layer 61 protruding from the topsurface of the semiconductor substrate 11, the aspect ratio of thecontact hole for formation of the shared contact plug 63 can be reduced.The requirements of etching precision of the contact hole can thereforebe widely eased. Hence, it is unnecessary to increase the size of thefirst source/drain region 29A, and thus the semiconductor device can bedownsized.

Hereinafter, a fabrication method for the semiconductor device ofEmbodiment 2 will be described with reference to FIGS. 7A, 7B, 8A and8B. The process steps up to the formation of the first and secondsource/drain regions 29A and 29B are the same as those in Embodiment 1,and thus description thereof is omitted here.

As shown in FIG. 7A, after the formation of the first and secondsource/drain regions 29A and 29B, a protection film 81 made of SiO₂ andthe like is formed on the entire surface of the semiconductor substrate11, and then the portion thereof overlying the first source/drain region29A is removed. The protection film 81 is therefore left behind coveringthe gate electrode 22, the gate interconnect 42 and the secondsource/drain region 29B.

As shown in FIG. 7B, the SiGe film 61 is epitaxially grown on the topsurface of the first source/drain region 29A on which Si is exposed, toobtain the SiGe film 61 protruding from the semiconductor substrate 11.

As shown in FIG. 8A, after selective removal of the protection film 81,a metal film having a high melting point such as nickel (Ni) isdeposited on the semiconductor substrate 11 to a thickness of severalnanometers and then heat-treated, to silicify the top portions of theSiGe layer 61, the gate electrode 22, the gate interconnect 42 and thesecond source/drain region 29B, to form a silicide layer 67. Afterremoval of the unreacted remainder of the metal film, an underlyinginsulating film 71 made of a silicon nitride film is formed on theentire surface of the semiconductor substrate 11, and then an interlayerinsulating film 72 made of a silicon oxide film is formed on theunderlying insulating film 71. Subsequently, a contact hole 72 a and acontact hole 72 b are formed through the interlayer insulating film 72and the underlying insulating film 71, to reach the portions of thesilicide layer 67 on the SiGe layer 61 and the gate interconnect 42 andto reach the portion of the silicide layer 67 on the second source/drainregion 29B, respectively. In this relation, the sidewall 43A exposed inthe contact hole 72 a may be etched selectively to make the sidewall 43Alower in height than the gate interconnect 42 to thereby expose part ofthe side face of the gate interconnect 42 closer to the gate electrode22.

As shown in FIG. 8B, the contact holes 72 a and 72 b are buried with aconductive material such as tungsten, to form the shared contact plug 63connected to the SiGe layer 61 and the gate interconnect 42 via thesilicide layer 67 and the contact plug 66 connected to the secondsource/drain region 29B via the silicide layer 67.

In this embodiment, no SiGe layer is formed on the second source/drainregion 29B. Alternatively, a SiGe layer may be formed on the secondsource/drain region 29B. Also, as in Embodiment 1, depressions may beformed in the top portions of the first and second source/drain regions29A and 29B. In this case, however, the top surface of the SiGe layer 61formed on the first source/drain region 29A should protrude above thetop surface of the semiconductor substrate 11 sufficiently to ensurethat the aspect ratio of the contact hole 72 a is not large.

Alteration to Embodiment 2

An alteration to Embodiment 2 of the present invention will be describedwith reference to the relevant drawings. FIG. 9 shows a cross-sectionalconfiguration of a semiconductor device of an alteration to Embodiment 2of the present invention. As shown in FIG. 9, the semiconductor deviceof this alteration has a local interconnect structure 60 composed of afirst SiGe layer 61A formed on the first source/drain region 29A, asecond SiGe layer 61B formed on the gate interconnect 42 and a sharedcontact plug 63 connected to part of the first SiGe layer 61A and partof the second SiGe layer 61B.

With the above configuration, the second SiGe layer 61B on the gateinterconnect 42 extends toward the sidewall 43A, narrowing the spacebetween the first and second SiGe layers 61A and 61B. Hence, the contacthole for the shared contact plug 63 can be made small compared with theconfiguration without the second SiGe layer 61B.

In this alteration, also, the SiGe layer may be formed also on thesecond source/drain region 29B, and depressions may be formed in the topportions of the first and second source/drain regions 29A and 29B, as inEmbodiment 1. Also, in this alteration, although the gate interconnect42 and the sidewall 43A are the same in height, the sidewall 43A may bemade lower in height than the gate interconnect 42 to expose part of theside face of the gate interconnect 42 closer to the gate electrode 22.

The semiconductor devices of the above embodiments and alterationrespectively have a contact plug electrically connected to the secondsource/drain region. Such a contact plug connected to the secondsource/drain region is not necessarily required. Also, a contact plugconnected to the gate electrode may be provided.

In the above embodiments and alteration, the SiGe layer was formed afterformation of the source/drain regions. Alternatively, the source/drainregions may be formed by ion implantation after formation of the SiGelayer. SiO₂ was used as the material of the gate insulating film.Alternatively, a film having a high dielectric constant (high-K film)made of hafnium dioxide (HfO₂), a hafnium silicate (HfSiO_(x)(x>1) orthe like, in place of SiO₂, may be used.

In the above embodiments and alteration, part of the gate interconnectwas formed on the active region. Alternatively, the entire of the gateinterconnect may be formed on the isolation region, or on the activeregion.

The semiconductor devices of the above embodiments and alteration can beused for a MIS transistor constituting part of a SRAM cell, or may beapplied to a MIS transistor constituting part of another circuit sectionsuch as a logic section. Otherwise the inventive semiconductor devicescan be used for devices other than memory.

As described above, according to the present invention, a semiconductordevice provided with a local interconnect structure involving noincrease in the size of source/drain regions can be implemented, andthus the present invention is useful as a semiconductor device having alocal interconnect structure and a fabrication method for such asemiconductor device.

The description of the embodiments of the present invention is givenabove for the understanding of the present invention. It will beunderstood that the invention is not limited to the particularembodiments described herein, but is capable of various modifications,rearrangements and substitutions as will now become apparent to thoseskilled in the art without departing from the scope of the invention.Therefore, it is intended that the following claims cover all suchmodifications and changes as fall within the true spirit and scope ofthe invention.

1-19. (canceled)
 20. A semiconductor device comprising: a gate electrodeformed on an active region of a substrate; a first silicon-germaniumlayer buried in a first recess provided in a portion of the activeregion on a first side of the gate electrode; a first silicide layerformed on the first silicon-germanium layer; a gate interconnect formedon a region of the active layer opposite side of the gate electrode tothe first silicon-germanium layer; a second silicide layer formed on thegate interconnect; a first contact plug connected to the first andsecond silicide layer, wherein the first contact plug is a sharedcontact plug to connect the first silicon-germanium layer and the gateinterconnect.
 21. The semiconductor device of claim 20, wherein thefirst contact plug is connected only to a part of the second silicidelayer closer to the first silicon-germanium layer in the gate lengthdirection.
 22. The semiconductor device of claim 20, wherein the secondsilicide layer is thinner than the gate interconnect.
 23. Thesemiconductor device of claim 20, wherein each of the first and secondsilicide layer is made of a silicide containing nickel.
 24. Thesemiconductor device of claim 20, wherein each of the gate electrode andthe gate interconnect is made of a polysilicon.
 25. The semiconductordevice of claim 20, wherein the first contact plug is made of a materialcontaining tungsten.
 26. The semiconductor device of claim 20, whereinthe first silicon-germanium layer is projected from an upper surface ofthe substrate.
 27. The semiconductor device of claim 20, wherein thegate electrode is formed on the active region via a gate insulatingfilm, the gate interconnect is formed on the active region via ainsulating film, and the gate insulating film and the insulating filmare made of the same insulating material and have the same thickness.28. The semiconductor device of claim 20, wherein the firstsilicon-germanium layer is a epitaxial layer.
 29. The semiconductordevice of claim 20, further comprising: a first side wall formed on oneside surface of the first gate interconnect closer to the firstsilicon-germanium layer; and a second side wall formed on another sidesurface of the gate interconnect opposite to the first silicon-germaniumlayer, wherein a top position of a part of the first side wall which islocated under the first contact plug is lower than a top position of thesecond side wall.
 30. The semiconductor device of claim 20, wherein thefirst contact plug does not contact with the second side wall.
 31. Thesemiconductor device of claim 20, wherein the second side wall includesan inner side wall having an L-shaped cross section and an outer sidewall formed on the inner side wall.
 32. The semiconductor device ofclaim 20, wherein a part of a side surface of the gate interconnectwhich is located under the first contact does not covered by the sidewall.
 33. The semiconductor device of claim 20, wherein the firstcontact plug connected to a side surface of the gate interconnect whichis located under the first contact plug.
 34. The semiconductor device ofclaim 20, further comprising: a third silicide layer formed on the gateelectrode, wherein the third silicide layer is thinner than the gateelectrode.
 35. The semiconductor device of claim 20, further comprising:a second silicon-germanium layer buried in a second recess provided in aportion of the active region on a second side of the gate electrode; anda fourth silicide layer formed on the second silicon-germanium layer.36. The semiconductor device of claim 35, further comprising: the secondcontact plug connected to the fourth silicide layer, wherein the firstcontact plug is larger than the second contact plug.
 37. Thesemiconductor device of claim 20, further comprising: an underlyinginsulating film formed on the gate electrode; and an interlayerinsulating film formed on the underlying insulating film, wherein theinterlayer insulating film has a flat top surface, and the first contactplug is formed to penetrate the interlayer insulating film and theunderlying insulating film.
 38. The semiconductor device of claim 37,wherein the underlying insulating film is made of silicon nitride. 39.The semiconductor device of claim 20, further comprising: an isolationregion formed on the substrate to surround the active region; and a sidewall formed on a side surface of the gate electrode opposite to thefirst silicon-germanium layer, wherein the side wall formed on theisolation region.